Huawei obtains new semiconductor patent for transistors development

Huawei has recently obtained a new tech patent with application number CN116266536A, which is related to semiconductor processing and preparing transistors.

According to the patent details, Huawei has titled this semiconductor patent “method for preparing transistors and transistors”. The purpose of this patent is to prepare a basic chip unit with transistors. It’s believed that the patent could help the company to reduce the cost of manufacturing semiconductors.

Below you can check a more technical term of this patent:

The fabrication method of the transistor of the present application uses etching to remove the dummy gate during the process of etching the interlayer dielectric layer to open the slot hole and forms the metal gate by using the slot hole.

Compared with the existing high dielectric constant metal gate preparation process, the process steps can be saved and the process cost can be reduced.

The specific method includes providing a semiconductor substrate, sequentially stacking and forming an oxide dielectric layer, a high-K dielectric layer, and a dummy gate on the semiconductor substrate. Opening a groove in the semiconductor substrate, and forming a source and a drain in the groove.

Forming an interlayer dielectric layer covering the semiconductor substrate and the dummy gate. Forming through holes aligned with the source and drain electrodes and slot-type holes aligned with the dummy gate in the interlayer dielectric layer, and forming the slot-type hole Remove the dummy gate during the process.

Form conductive metal material in slotted holes and vias. The present application also provides a transistor prepared by applying the method.

Conclusion:

Currently, Huawei has not announced any information about the use of this patent. However, it’s another addition to the research and development of Huawei and the company’s effort to achieve robust chipset development.

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