Huawei is ready to produce 3D DRAM technology developed in collaboration with the Institute of Microelectronics of the Chinese Academy of Sciences during the VLSI conference 2022 to display various memory-associated exhibitions.
Huawei has released Huawei’s 3D DRAM technology, the CAA configuration transistor 3D DRAM is based on indium gallium zinc IGZO-FET material, which is equipped with some magnificent temperature solidity and dependability.
This is an oxide that is not unknown. Professor Hosono of the Tokyo Institute of Technology, a world-renowned researcher in the field of materials science discovered the IGZO in 2004.
According to Huawei’s previously released article related to memory – “Huawei Kirin takes you a picture to understand the memory”. Huawei said that with the shrinkage of chip size, the DRAM process microcosm will become more and more difficult, “Moore’s Law” to the extent, that 3D DRAM is the subject of study for many manufacturers.
IBM, Samsung, Intel, Meta, Georgia Institute of Technology, Stanford University, and more will put forward inventions in the storage category.
The team of the Institute of Microelectronics of the Chinese Academy of Sciences and Huawei HiSilicon proposed a new vertical circular channel device structure (CAA).
It is reported that this structure reduces the device area and supports multi-layer stacking. By connecting the upper and lower CAA devices directly, the size of each memory cell can be decreased to 4F2.